| PART |
Description |
Maker |
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| SMDT-650H-12 SMDT-650H-14 SMDT-650H-16 SMDT-650H-1 |
Diod-Thyristor Module
|
SEMPO ELECTRONIC Limited
|
| D911SH |
Fast Hard Drive Diod e
|
eupec GmbH
|
| D1121SH |
Fast Hard Drive Diod e
|
eupec GmbH
|
| IRF7807VD2PBF |
Co-Pack N-channel HEXFET? Power MOSFET and Schottky Diode
FETKY MOSFET / SCHOTTKY DIODE
|
International Rectifier
|
| IRG4BC20SD-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
| IRF7322D1 |
MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )
FETKY? MOSFET / Schottky Diode
|
International Rectifier
|
| STS4DPFS20L |
P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
P-CHANNEL POWER MOSFET
P-CHANNEL 20V - 0.07ohm - 4A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER
P-CHANNEL 20V 0.07 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
|
